(China (Mainland))
Product Summary
Parametrics
DC Characteristics
Breakdown voltage
I
(BR)
= 100 μA
V
(BR)
85 - - V
Reverse current
V
R
= 70 V
V
R
= 25 V, T
A
= 150 °C
V
R
= 70 V, T
A
= 150 °C
I
R
-
-
-
-
-
-
0.15
30
50
μA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
Electrical Characteristics at T
= 25°C, unless otherwise specified
Features
Type Package Configuration Marking
BAV99
BAV99F*
BAV99S
BAV99T
BAV99U
BAV99W
SOT23
TSFP-3
SOT363
SC75
SC74
SOT323
series
series
dual series
series
dual series
series
A7s
A7s
A7s
A7s
A7s
A7s
* Preliminary
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BAV99 |
Taiwan Semiconductor |
Diodes (General Purpose, Power, Switching) 70 Volt 200mA 225mW |
Data Sheet |
|
|
||||||||||||
 |
BAV99 /T3 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
Data Sheet |
Negotiable |
|
||||||||||||
|
BAV99,215 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) SW DBL 75V 215MA HS |
Data Sheet |
|
|
||||||||||||
|
BAV99,235 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
Data Sheet |
|
|
||||||||||||
 |
BAV99/8,215 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) HIGH-SPEED SWITCHING DIODES |
Data Sheet |
|
|
||||||||||||
 |
BAV99/8,235 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) SWTCH 100V 215mA |
Data Sheet |
|
|
||||||||||||
 |
BAV99_D87Z |
Fairchild Semiconductor |
Rectifiers 70V 200mA A7 |
Data Sheet |
|
|
||||||||||||
 |
BAV99_D87Z_Q |
Fairchild Semiconductor |
Rectifiers 70V 200mA A7 |
Data Sheet |
Negotiable |
|
||||||||||||
