(China (Mainland))
Product Summary
The SI4850EY-T1-GE3 is an N-channel reduced Qg, fast switching MOSFET.
Parametrics
SI4850EY-T1-GE3 absolute maximum ratings: (1)drain-source voltage: 60V; (2)gate-source voltage: ±20V; (3)continuous drain current: 6A; (4)pulsed drain current: 40A; (5)avalanche current: 15A; (6)single pulse avalanche energy: 11mJ; (7)operating junction and storage temperature range: -55 to 175℃.
Features
SI4850EY-T1-GE3 features: (1)halogen-free according to IEC definition; (2)trenchFET power MOSFETs; (3)175℃ maximum junction temeperature; (4)compliant to RoHS directive.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SI4850EY-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 8.5A 3.3W 22mohm @ 10V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Si4800 |
Other |
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Data Sheet |
Negotiable |
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SI4800,518 |
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MOSFET N-CH 30V 9A SOT96-1 |
Data Sheet |
Negotiable |
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SI4800BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
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SI4800BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
Data Sheet |
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SI4800DY |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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SI4800DY-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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