Product Summary

The SI9933CDY-T1-GE3 is a Dual P-Channel 20-V (D-S) MOSFET.

Parametrics

SI9933CDY-T1-GE3 absolute maxing ratings: (1)Drain-Source Voltage VDS: -20 V; (2)Gate-Source Voltage VGS: ±12 V; (3)Continuous Drain Current (TJ = 150℃) TA = 25℃ ID: ±3.4 A; (4)Pulsed Drain Current IDM: ±16 A; (5)Continuous Source Current (Diode Conduction) IS: -2.0 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.0 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.

Features

SI9933CDY-T1-GE3 specifications: (1)Gate Threshold Voltage VGS(th): -0.8 V; (2)Gate-Body Leakage IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current IDSS: -1 μA; (4)On-State Drain Current ID(on): -16 A; (5)Drain-Source On-State Resistance rDS(on): 0.06 to 0.075 Ω; (6)Forward Transconductance gfs: 8 S; (7)Diode Forward Voltage VSD: -0.7 to -1.2 V.

Diagrams

SI9933CDY-T1-GE3 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Data Sheet
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Negotiable