SI9933CDY-T1-GE3

Dual P-Channel 20-V MOSFET, SOP8, ±3.4 A, 2.0 W

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.11~0.27 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.11~0.27

PartNumber:: SI9933CDY-T1-GE3

Brand:: STMicroelectronics - ST | Pack: SOP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Eline's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-11-14

From Other Seller

Part Number:SI9933CDY-T1-GE3
US $0.11 - 0.27
HEF4093BT

US $0.15 - 1.20 / Piece
(0) Remove
MOC3063

US $0.32 - 1.50 / Piece
(0) Remove
Quantity:

piece

Product Summary

The SI9933CDY-T1-GE3 is a Dual P-Channel 20-V (D-S) MOSFET.

Parametrics

SI9933CDY-T1-GE3 absolute maxing ratings: (1)Drain-Source Voltage VDS: -20 V; (2)Gate-Source Voltage VGS: ±12 V; (3)Continuous Drain Current (TJ = 150℃) TA = 25℃ ID: ±3.4 A; (4)Pulsed Drain Current IDM: ±16 A; (5)Continuous Source Current (Diode Conduction) IS: -2.0 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.0 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.

Features

SI9933CDY-T1-GE3 specifications: (1)Gate Threshold Voltage VGS(th): -0.8 V; (2)Gate-Body Leakage IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current IDSS: -1 μA; (4)On-State Drain Current ID(on): -16 A; (5)Drain-Source On-State Resistance rDS(on): 0.06 to 0.075 Ω; (6)Forward Transconductance gfs: 8 S; (7)Diode Forward Voltage VSD: -0.7 to -1.2 V.