(China (Mainland))
Product Summary
The IRGP20B60PDPBF-MX is a warp2 series IGBT with ultrafast soft recovery diode. The applications of the IRGP20B60PDPBF-MX include Telecom and Server SMPS, PFC and ZVS SMPS Circuits, Uninterruptable Power Supplies, Consumer Electronics Power Supplies and Lead-Free.
Parametrics
IRGP20B60PDPBF-MX absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃, Continuous Collector Current: 40A; (3)IC @ TC = 100℃, Continuous Collector Current: 22A; (4)ICM, Pulse Collector Current: 80A; (5)ILM, Clamped Inductive Load Current: 80 A; (6)IF @ TC = 25℃, Diode Continous Forward Current: 31A; (7)IF @ TC = 100℃, Diode Continous Forward Current: 12A; (8)IFRM, Maximum Repetitive Forward Current: 42A; (9)VGE, Gate-to-Emitter Voltage: ±20 V; (10)PD @ TC = 25℃, Maximum Power Dissipation: 220 W; (11)PD @ TC = 100℃, Maximum Power Dissipation: 86 W; (12)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +150℃; (13)Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw: 10 lbf·in (1.1 N·m).
Features
IRGP20B60PDPBF-MX features: (1)NPT Technology, Positive Temperature Coefficient; (2)Lower VCE(SAT); (3)Lower Parasitic Capacitances; (4)Minimal Tail Current; (5)HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode; (6)Tighter Distribution of Parameters; (7)Higher Reliability.
Diagrams
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