(China (Mainland))
Product Summary
The TLP291(GB-TP,E,O) is a GaAs IRED & PHOTO-TRANSISTOR. It consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. The TLP291(GB-TP,E,O) is housed in the SO16 package, very small and thin coupler.
Parametrics
TLP291(GB-TP,E,O) absolute maximum ratings: (1)LED, Forward Current IF: 50 mA; Forward Current Derating ΔIF /℃: -0.5 (Ta≥25℃) mA /℃; Pulse Forward Current IFP: 1 A; Reverse Voltage VR: 5 V; Junction Temperature Tj: 125℃; (2)detector, Collector-Emitter Voltage VCEO: 80 V; Emitter-Collector Voltage VECO: 7 V; Collector Current IC: 50 mA; Collector Power Dissipation (1 Circuit) PC: 100 mW; Collector Power Dissipation; (3)Derating(Ta≥25℃) (1 Circuit) ΔPC /℃: -1.0 mW /℃; Junction Temperature Tj: 125℃; (4)Operating Temperature Range Topr: -55~100℃; (5)Storage Temperature Range Tstg: -55~125℃; (6)Lead Soldering Temperature Tsol: 260 (10s)℃; (7)Total Package Power Dissipation (1 Circuit) PT: 170 mW; (8)Total Package Power Dissipation Derating (Ta≥25℃) (1 Circuit) ΔPT /℃: -1.7 mW /℃; (9)Isolation Voltage BVS: 2500(AC,1min,R.H.≤60%) Vrms.
Features
TLP291(GB-TP,E,O) features: (1)Collector-Emitter Voltage: 80 V (min); (2)Current Transfer Ratio: 50% (min), Rank GB: 100% (min); (3)Isolation Voltage: 2500 Vrms (min); (4)Guaranteed performance over -55 to 110℃; (5)UL (under preparation): UL1577 , File No. E67349.
Diagrams
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