(China (Mainland))
Product Summary
The FQPF10N60C is an N-Channel enhancement mode power field effect transistor, which is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of the FQPF10N60C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF10N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
FQPF10N60C absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain Current - Continuous (TC = 25℃):9.5 A, Continuous (TC = 100℃): 3.3 A; (3)Drain Current - Pulsed: 38 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 700 mJ; (6)Avalanche Current: 9.5 A; (7)Repetitive Avalanche Energy: 15.6 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃): 50 W, Derate above 25℃: 0.4 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
FQPF10N60C features: (1)9.5 A, 600V, RDS(on) = 0.73 Ω@VGS = 10 V; (2)Low gate charge ( typical 44nC); (3)Low Crss ( typical 18pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FQPF10N60C |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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|
FQPF10N60CF |
Fairchild Semiconductor |
MOSFET 600V N-Ch MOSFET |
Data Sheet |
Negotiable |
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|
FQPF10N60CT |
Fairchild Semiconductor |
MOSFET N-CH/600V/10A QFET C-Series |
Data Sheet |
Negotiable |
|
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|
FQPF10N60CYDTU |
Fairchild Semiconductor |
MOSFET 600V N-Channel Adv Q-FET C-Series |
Data Sheet |
Negotiable |
|
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