Product Summary

The FQPF10N60C is an N-Channel enhancement mode power field effect transistor, which is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of the FQPF10N60C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF10N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF10N60C absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain Current - Continuous (TC = 25℃):9.5 A, Continuous (TC = 100℃): 3.3 A; (3)Drain Current - Pulsed: 38 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 700 mJ; (6)Avalanche Current: 9.5 A; (7)Repetitive Avalanche Energy: 15.6 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃): 50 W, Derate above 25℃: 0.4 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.

Features

FQPF10N60C features: (1)9.5 A, 600V, RDS(on) = 0.73 Ω@VGS = 10 V; (2)Low gate charge ( typical 44nC); (3)Low Crss ( typical 18pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQPF10N60C diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQPF10N60C
FQPF10N60C
Fairchild Semiconductor
MOSFET 600V N-Ch Q-FET advance C-Series
Data Sheet
Negotiable 
FQPF10N60CF
FQPF10N60CF
Fairchild Semiconductor
MOSFET 600V N-Ch MOSFET
Data Sheet
Negotiable 
FQPF10N60CT
FQPF10N60CT
Fairchild Semiconductor
MOSFET N-CH/600V/10A QFET C-Series
Data Sheet
Negotiable 
FQPF10N60CYDTU
FQPF10N60CYDTU
Fairchild Semiconductor
MOSFET 600V N-Channel Adv Q-FET C-Series
Data Sheet
Negotiable