Product Summary

The TLP627-4(F) is a GaAs IRED & photo-transistor. It consists of a gallium arsenide infreared emitting diode optically coupled to a darlington connected phototransistor which has an intergral base-emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP627-4(F) provides four isolated channels per package.

Parametrics

TLP627-4(F) absolute maximum ratings: (1)forward current: 50 mA; (2)forward current darating: -0.5 (Ta≤25℃) mA/℃; (3)pulse forward current: 1 A; (4)power dissipation: 70 mW; (5)power disspation derating: -0.7 mW/℃; (6)reverse voltage: 5 V; (7)junction temperature: 125 ℃; (8)storage temperature: -55 to 125 ℃; (9)operating temperature: -55 to 100 ℃; (10)lead soldering temperature: 260 ℃.

Features

TLP627-4(F) features: (1)collector-emitter voltage: 300 V min; (2)current transfer ratio: 1000 % min; (3)isolation voltage: 5000 Vrms min; (4)UL recongnized: UL1577, file No.E67349.

Diagrams

TLP627-4(F) pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TLP627-4(F)
TLP627-4(F)

PHOTOCOUPLER QUAD HS DARL 16-DIP
Data Sheet
0-1: $1.67
1-25: $1.35
25-100: $1.22
100-250: $1.08
250-500: $0.95
500-1000: $0.78
1000-2500: $0.73
2500-5000: $0.70
5000-10000: $0.68
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