Product Summary

The irf7314 is a HEXFET Power MOSFET. The irf7314 utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

irf7314 absolute maximum ratings: (1)Drain source voltage, VDS: 30V; (2)Gate source voltage, VGS: ±20V; (3)Continuous drain current, ID: TA=25℃, 6.5A; TA=70℃, 5.2A; (4)Pulsed drain current, IDM: 30A; (5)Power dissipation, PD: TA=25℃, 2.0W; TA=70℃, 1.3W; (6)Single pulse avalanche energy, EAS: 82mJ.

Features

irf7314 features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual P-Channel MOSFET; (4)Surface Mount; (5)Fully Avalanche Rated.

Diagrams

irf7314 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7314
IRF7314
Other

Data Sheet
Negotiable 
IRF7314PBF
IRF7314PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.69
1-25: $0.43
25-100: $0.29
100-250: $0.28
IRF7314QPBF
IRF7314QPBF
International Rectifier
MOSFET
Data Sheet
Negotiable 
IRF7314QTRPBF
IRF7314QTRPBF
International Rectifier
MOSFET
Data Sheet
Negotiable 
IRF7314Q
IRF7314Q
Other

Data Sheet
Negotiable 
IRF7314TR
IRF7314TR
International Rectifier
MOSFET 2P-CH 20V 5.3A 8-SOIC
Data Sheet
1-4000: $0.57
IRF7314TRPBF
IRF7314TRPBF
International Rectifier
MOSFET MOSFT DUAL PCh -20V 5.3A
Data Sheet
0-1: $0.69
1-25: $0.43
25-100: $0.29
100-250: $0.28