Product Summary

The IRFZ44NPBF-MX is a Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFZ44NPBF-MX absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 49 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 35 A; (3)Pulsed Drain Current: 160 A; (4)PD @TC = 25℃, Power Dissipation: 94 W; (5)Linear Derating Factor: 0.63 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Avalanche Current: 25 A; (8)epetitive Avalanche Energy: 9.4 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) ℃.

Features

IRFZ44NPBF-MX features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.

Diagrams

IRFZ44NPBF-MX circuit diagram

IRFZ10
IRFZ10

Vishay/Siliconix

MOSFET N-Chan 60V 10 Amp

Data Sheet

0-680: $0.95
680-1000: $0.94
1000-2000: $0.91
2000-5000: $0.89
IRFZ10, SiHFZ10
IRFZ10, SiHFZ10

Other


Data Sheet

Negotiable 
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IRFZ10PBF

Vishay/Siliconix

MOSFET N-Chan 60V 10 Amp

Data Sheet

0-1: $1.01
1-10: $0.80
10-100: $0.67
100-250: $0.59
IRFZ14
IRFZ14

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MOSFET N-Chan 60V 10 Amp

Data Sheet

0-730: $0.89
730-1000: $0.85
1000-2000: $0.83
2000-5000: $0.82
IRFZ14, SiHFZ14
IRFZ14, SiHFZ14

Other


Data Sheet

Negotiable 
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IRFZ14L


MOSFET N-CH 60V 10A TO-262

Data Sheet

0-650: $0.47