Product Summary

Parametrics

Features
? 2.0A, 600V, R
DS(on)
= 5.0 Ω @V
GS
= 10 V
? Low gate charge ( typical 12.5 nC)
? Low Crss ( typical 7.6 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability

Features

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N60
2N60
Other

Data Sheet
Negotiable 
2N6027
2N6027
Central Semiconductor
SCRs Prog Uni-Junction
Data Sheet
0-2500: $0.41
2500-5000: $0.40
5000-10000: $0.37
2N6027G
2N6027G
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
0-1: $0.22
1-25: $0.16
25-100: $0.11
100-500: $0.09
2N6027RL1
2N6027RL1

THYRISTOR PROG UNIJUNCT 40V TO92
Data Sheet
Negotiable 
2N6027RL1G
2N6027RL1G
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
0-1: $0.10
1-25: $0.09
25-100: $0.09
100-500: $0.08
2N6027RLRA
2N6027RLRA
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
Negotiable 
2N6027RLRAG
2N6027RLRAG
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
0-1: $0.28
1-25: $0.19
25-100: $0.15
100-500: $0.10
2N6028
2N6028
Central Semiconductor
SCRs Prog Uni-Junction
Data Sheet
0-2500: $0.24
2500-5000: $0.23