Product Summary
The IRFZ48NPBF is a HEXFET Power MOSFET. The IRFZ48NPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFZ48NPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFZ48NPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 64A; (2)Continuous Drain Current, VGS @ 10V: 45A; (3)Pulsed Drain Current: 210A; (4)Power Dissipation: 130W; (5)Linear Derating Factor: 0.83W/℃; (6)Gate-to-Source Voltage: ± 20V; (7)Avalanche Current: 32A; (8)Repetitive Avalanche Energy: 13mJ; (9)Peak Diode Recovery dv/dt: 5.0V/ns; (10)Operating Junction and Storage Temperature Range: -55 to +175℃.
Features
IRFZ48NPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.
Diagrams
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![]() IRFZ48NPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 55V 64A 14mOhm 54nC |
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![]() IRFZ10 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 10 Amp |
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![]() IRFZ10, SiHFZ10 |
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![]() Negotiable |
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![]() IRFZ10PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 10 Amp |
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![]() IRFZ14 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 10 Amp |
![]() Data Sheet |
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![]() IRFZ14, SiHFZ14 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() IRFZ14L |
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![]() MOSFET N-CH 60V 10A TO-262 |
![]() Data Sheet |
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