(China (Mainland))
Product Summary
Parametrics
Collector?emitter voltage: 55 V (min)
Current transfer ratio: 50% (min)
Rank GB: 1 00% (min)
Isolation voltage: 2500 Vrms (min)
UL recognized
made in Japan: UL 1577, file No. E67349
made in Thailand: UL1 577, file No. E 152349
Features
The TOSHIBA TLP521?1 , ?2 and ?4 consist of a photo ?transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP521?2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP521?4 provides four isolated channels in a
sixteen plastic DIP package.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 TLP521 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
TLP521−1 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
TLP521−2 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
TLP521−4 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
TLP521-1 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
TLP521-1(Y,F,T) |
Toshiba |
Transistor Output Optocouplers PCOUPLER GaAs Ired x |
Data Sheet |
Negotiable |
|
||||
|
TLP521-1-4 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
TLP521-1GB |
Other |
|
Data Sheet |
Negotiable |
|
||||
