Product Summary

The IRFB4110PBF-MX is a HEXFET power MOSFET. The applications of the IRFB4110PBF-MX include High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.

Parametrics

IRFB4110PBF-MX absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 180 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 130 A; (3)Pulsed Drain Current, IDM: 670 A; (4)PD @TC = 25℃, Maximum Power Dissipation: 370 W; (5)Linear Derating Factor: 2.5 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Peak Diode Recovery, dv/dt: 5.3 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 TO 175℃; (9)Soldering Temperature, for 10 seconds(1.6mm from case): 300℃; (10)Mounting torque, 6-32 or M3 screw: 10lb·in (1.1N·m).

Features

IRFB4110PBF-MX features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability.

Diagrams

IRFB4110PBF-MX circuit diagram

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