Product Summary

The AO3416 is an N-Channel Enhancement Mode Field Effect Transistor. The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

Parametrics

AO3416 absolute maximum ratings: (1)Junction and Storage Temperature Range:-55 to 150℃; (2)Pulsed Drain Current:30A; (3)Power Dissipation:0.9W; (4)Continuous Drain Current:6.5A; (5)Gate-Source Voltage:±8V; (6)Drain-Source Voltage:20V.

Features

AO3416 features: (1)VDS (V) = 20V; (2)ID = 6.5 A; (3)RDS(ON) < 22mΩ(VGS = 4.5V); (4)RDS(ON) < 26mΩ(VGS = 2.5V); (5)RDS(ON) < 34mΩ(VGS = 1.8V); (6)ESD Rating: 2000V HBM.

Diagrams

AO3416 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO3416
AO3416

MOSFET N-CH 20V 6.5A SOT23
Data Sheet
0-1: $0.33
1-25: $0.22
25-100: $0.18
100-250: $0.15
250-500: $0.12
500-1000: $0.09
AO3416L
AO3416L
Other

Data Sheet
Negotiable