Product Summary
The AO3416 is an N-Channel Enhancement Mode Field Effect Transistor. The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Parametrics
AO3416 absolute maximum ratings: (1)Junction and Storage Temperature Range:-55 to 150℃; (2)Pulsed Drain Current:30A; (3)Power Dissipation:0.9W; (4)Continuous Drain Current:6.5A; (5)Gate-Source Voltage:±8V; (6)Drain-Source Voltage:20V.
Features
AO3416 features: (1)VDS (V) = 20V; (2)ID = 6.5 A; (3)RDS(ON) < 22mΩ(VGS = 4.5V); (4)RDS(ON) < 26mΩ(VGS = 2.5V); (5)RDS(ON) < 34mΩ(VGS = 1.8V); (6)ESD Rating: 2000V HBM.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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AO3416L |
Other |
Data Sheet |
Negotiable |
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AO3416 |
MOSFET N-CH 20V 6.5A SOT23 |
Data Sheet |
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